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| Brand | ADVANCE RIKO |
|---|---|
| Origin | Japan |
| Model | TCN-2ω |
| Measurement Principle | 2ω Lock-in Thermography (Cross-Plane Thermal Conductivity) |
| Temperature Range | Ambient (23 ± 2 °C) |
| Sample Dimensions | 10–20 mm (L) × 10 mm (W) × 0.3–1 mm (total thickness, including substrate) |
| Substrate Options | Si (recommended), Ge, Al₂O₃ |
| Metal Transducer Film | Au, 100 nm thick, 1.7 mm × 15 mm |
| Thermal Conductivity Range | 0.1–10 W·m⁻¹·K⁻¹ |
| Atmosphere | Ambient air |
| Compliance | ISO/IEC 17025-aligned methodology, compatible with GLP documentation workflows |
| Brand | Makeway |
|---|---|
| Model | MKW-3800 |
| Origin | Shanghai, China |
| Measurement Principle | Non-contact structured light reflectometry |
| Sample Diameter | 2–8 inch wafers |
| Sampling Interval | down to 0.1 mm (full-field uniform sampling) |
| Measurement Time | <30 s (for 6-inch wafer, full aperture) |
| Warpage Range | 0.5–5000 µm |
| Warpage Repeatability | ±0.2 µm or ±1% |
| Warpage Accuracy | ±0.5 µm or ±1.5% |
| Stress Range | 1–10,000 MPa |
| Curvature Radius Range | 0.5–10,000 m |
| Curvature Repeatability | <1% (1σ @ 25 m radius) |
| Stress Repeatability | ±1.5 MPa or ±1% |
| Compatible Substrates | Si, GaAs, LiTaO₃, glass, sapphire, InP, SiC, GaN, bonded wafers, patterned wafers, square optical substrates |
| Compatible Films | Si, SiO₂, SiNₓ, Al₂O₃, TiO₂, photoresist, metal films, adhesives, nano-polymeric films, hybrid organic/inorganic films |
| Software | Stress Mapper (real-time acquisition, Stoney equation-based stress calculation, polynomial fitting, spatial filtering, ROI analysis, time-resolved & temperature-dependent stress profiling) |
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