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| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Category | Domestic |
| Model | IPS Series SiC Crystal Growth System |
| Crystal Types | Silicon Carbide (SiC) only |
| Max. Crystal Diameter | 6-inch and 8-inch |
| Typical Boule Length (Constant-Diameter Section) | 20–30 mm |
| Base Vacuum | ≤5.0 × 10⁻⁵ Pa |
| Pressure Rise Rate | ≤3 Pa / 12 h |
| Microtube Density (6″ P-type Substrate) | <0.5 cm⁻² |
| Resistivity Range (6″ P-type) | 0.015–0.028 Ω·cm |
| Cooling System | Dual-loop water cooling with real-time temperature & flow monitoring |
| Heating Method | Optimized RF induction coil architecture |
| Process Control | Fully integrated PIM self-diagnostic module + multi-stage PID thermal profiling |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | IMD MPCVD Diamond Growth System |
| Crystal Material | Synthetic Diamond |
| Maximum Crystal Diameter | 2.2 inches (55.9 mm) |
| Typical Crystal Length (Constant-Diameter Zone) | 2–3 cm |
| Process Capability | High-Purity Diamond CVD Deposition, In-situ Thermal Annealing, Homoepitaxial & Heteroepitaxial Growth |
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