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| Origin | Jiangsu, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Regional Origin | Domestic (PRC) |
| Model | Custom Grating Fabrication |
| Pricing | Available Upon Technical Consultation |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Category | Domestic |
| Model | IPS Series SiC Crystal Growth System |
| Crystal Types | Silicon Carbide (SiC) only |
| Max. Crystal Diameter | 6-inch and 8-inch |
| Typical Boule Length (Constant-Diameter Section) | 20–30 mm |
| Base Vacuum | ≤5.0 × 10⁻⁵ Pa |
| Pressure Rise Rate | ≤3 Pa / 12 h |
| Microtube Density (6″ P-type Substrate) | <0.5 cm⁻² |
| Resistivity Range (6″ P-type) | 0.015–0.028 Ω·cm |
| Cooling System | Dual-loop water cooling with real-time temperature & flow monitoring |
| Heating Method | Optimized RF induction coil architecture |
| Process Control | Fully integrated PIM self-diagnostic module + multi-stage PID thermal profiling |
| Brand | DENTON |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Voyager |
| Price Range | USD $38,000 – $64,000 |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Model | YPL-NIL-SI400 |
| Temperature Range | RT to 350 °C |
| Pressure Range | 0–20 psi (on 4″ wafer) |
| Vacuum Range | 101.3 kPa to 0.1 Pa |
| UV Exposure System | Integrated |
| Sample Holder Max Diameter | 100 mm (4″) |
| Cooling | Integrated Water-Cooled System |
| Control | PLC-based with Touchscreen HMI |
| Software | Proprietary SI400 Machine Control Suite |
| Loading Method | Manual Wafer/Template Handling |
| Sealing | Bellows-Sealed Vacuum Chamber |
| Compliance | Designed for Class 100–1000 cleanroom integration |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | VIL1000 |
| Light Source | Coherent Laser (UV/Deep-UV or Visible, Configurable) |
| Minimum Achievable Line Width | <50 nm |
| Grating Period Range | 240–1500 nm |
| Maximum Exposure Field | 200 mm × 200 mm (8-inch wafer compatible) |
| Pattern Reconfigurability | Real-time, maskless, via beam steering optics |
| Positioning Accuracy | Sub-10 nm (closed-loop piezo stage) |
| Origin | Hong Kong |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Mainland China Made |
| Model | Holimatrix |
| Price Range | USD 140,000 – 210,000 |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | ELS-F125 |
| Pricing | Available Upon Request |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | EIS-200 |
| Pricing | Available Upon Request |
| Origin | Jiangsu, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model Variants | Quartz / Silicon / Polymer Templates |
| Pricing | Available Upon Request |
| Template Materials | Fused Silica (Quartz), Single-Crystal Silicon, Silicon Nitride (SiNₓ), Silicon Carbide (SiC), Borosilicate Glass |
| Max Template Diameter | 100 mm (4″) |
| Minimum Feature Size | 50 nm (for ≤2″ area) |
| EBL Service Capability | Down to 30 nm feature size |
| Substrate Compatibility | Conductive (e.g., Si, GaAs, InP) and Non-Conductive (e.g., SiO₂/Si, quartz, polymer-coated wafers) substrates |
| Fabrication Scope | Micro- and nanoscale patterning on Si, III–V (GaAs, InP), II–VI (ZnS, CdTe), and polymer substrates |
| Brand | KLA |
|---|---|
| Origin | Fujian, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | R50 |
| Price Range | USD $42,000 – $140,000 (FOB) |
| Automation Level | Fully Automated |
| Sheet Resistance Range | 5 mΩ/□ to 5 MΩ/□ |
| Measurement Accuracy | ±1% |
| Repeatability | <0.2% |
| XY Stage Options | 100 mm × 100 mm or 200 mm × 200 mm |
| Maximum Sample Diameter | 200 mm |
| Measurement Modes | Contact Four-Point Probe (4PP) and Non-Contact Eddy Current (EC) |
| Mapping Configurations | Linear, Rectangular, Polar, and User-Defined Grids |
| Compliance | ASTM F84, ISO 10474, SEMI MF67, USP <1031>, GLP/GMP-ready audit trail support |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Model | CMP20 |
| Wafer Size | 2", 4", 6" |
| Platen Count | 1 |
| Platen/Head/Conditioner Speed | 0–300 rpm (continuously adjustable) |
| Polishing Head Downforce | 0–4 psi (at 4") |
| Slurry & DI Water Flow | 0–300 mL/min (per channel, peristaltic pump) |
| Stroke Range (Head/Conditioner Reciprocation) | 90 mm |
| Dimensions (L×W×H) | 800 mm × 1000 mm × 2000 mm |
| Optional Modules | Electrochemical Unit (±10 V / ±250 mA, 2-/3-electrode support, CV, etc.), UV Module (λ = 95 nm, 1020 mm × 100 mm emission area, 200 W input power) |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | EPS Series |
| Price Range | USD $65,000 – $130,000 (FOB USA) |
| Product Category | RF-Compatible Manual Probe Station |
| Operation Mode | Manual |
| Base Platform | 150 mm Wafer-Capable |
| Max XY Travel | 155 mm × 155 mm |
| Minimum Positioning Resolution | 5 µm |
| Theta Rotation | 360° Continuous |
| Z-Axis Vertical Travel | 10 mm |
| Standard Base Dimensions | 490 mm × 490 mm × 480 mm (W × D × H) |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Model | M-Series |
| Operation Type | Manual |
| Maximum Wafer Size | 150 mm (6-inch) and 100 mm (4-inch) |
| Probe Compatibility | DC to 67 GHz RF, MEMS, and Surface Resistivity Measurements |
| Target Pad Size | ≥30 µm |
| Application Scope | Academic Teaching, R&D Lab Characterization, Low-Volume IC Device Evaluation |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Category | Surface Resistivity Probe Station |
| Operation Mode | Manual |
| Compatible Wafer Sizes | 4", 6", 8", 12" |
| Modular Expansion Support | mmWave (mmW), Failure Analysis (FA), MEMS, Wafer-Level Reliability (WLR), Optoelectronics |
| Brand | Appo |
|---|---|
| Origin | Shanghai, China |
| Model | NIL-100 |
| Imprint Area | 4-inch (100 mm) wafers/substrates |
| Max. Pressure | 8 bar (integrated air compressor), 20 bar (external cleanroom supply) |
| Temperature Range | Ambient to 250 °C |
| UV Source | 400 W high-pressure Hg lamp, dominant wavelength 365 nm |
| Vacuum Level | ≤10 Pa |
| Heating Method | Electromagnetic single-side heating |
| Automation | Motorized auto-demolding |
| Compatible imprint modes | Thermal embossing & UV-curable step-and-flash imprint lithography (S-FIL) |
| Optional consumables | Full suite of nanoimprint resists (thermal, UV-curable, lift-off, deep-etch), anti-sticking agents, adhesion promoters, and custom mold fabrication support (Ni, SFP®, Hybrid Mold®) |
| Resolution capability | ≤20 nm (with appropriate mold and process optimization) |
| Compliance | Designed for R&D and pilot-line use under GLP-aligned lab practices |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD-Workstation |
| Price Range | USD 650,000 – 13.5 million |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | IMD MPCVD Diamond Growth System |
| Crystal Material | Synthetic Diamond |
| Maximum Crystal Diameter | 2.2 inches (55.9 mm) |
| Typical Crystal Length (Constant-Diameter Zone) | 2–3 cm |
| Process Capability | High-Purity Diamond CVD Deposition, In-situ Thermal Annealing, Homoepitaxial & Heteroepitaxial Growth |
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